A novel nonvolatile memory based on self-organized quantum dots

Microelectronics Journal

Volumn 40, Issue 3, 2009, Pages 492-495

  Marent, A ^a   Geller, M ^a   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

III V semiconductor; Nonvolatile memory; Semiconductor quantum dots; Semiconductor storage

Indexed keywords

ALUMINUM ARSENIDE; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC CONDUCTIVITY; FLASH MEMORY; GALLIUM ALLOYS; INDIUM ARSENIDE; NONVOLATILE STORAGE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR STORAGE;

ACCESS TIME; DEVICE STRUCTURES; DRAM CELLS; DYNAMIC RANDOM ACCESS MEMORIES; GAAS; III-V SEMICONDUCTOR; INAS; INAS/GAAS; LOW PASS; MATRIXES; NONVOLATILE MEMORY; RETENTION TIME; ROOM TEMPERATURES; SELF-ORGANIZED QUANTUM DOTS; SEMICONDUCTOR MEMORIES; STORAGE TIME;

SEMICONDUCTOR QUANTUM DOTS;

EID: 61349190894     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.06.056     Document Type: Article

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