GaSb/GaAs type-II quantum dots grown by droplet epitaxy

Nanotechnology

Volumn 20, Issue 45, 2009, Pages

  Liang, Baolai ^a   Lin, Andrew ^a   Pavarelli, Nicola ^b   Reyner, Charles ^a   Tatebayashi, Jun ^a   Nunna, Kalyan ^a   He, Jun ^a   Ochalski, Tomasz J ^b   Huyet, Guillaume ^b   Huffaker, Diana L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE; BIMODAL SIZE DISTRIBUTION; BLUE-SHIFTED; CARRIER DECAY; CRYSTAL QUALITIES; DROPLET EPITAXY; EXCITATION INTENSITY; GAAS(001); GASB/GAAS; HIGH QUALITY; PHOTOLUMINESCENCE PEAK; QUANTUM DOT; QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPE;

CRYSTAL GROWTH; DROP FORMATION; ELECTRON MICROSCOPES; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR QUANTUM WIRES; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT;

ARTICLE; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; EXCITATION; FIELD EMISSION; PHOTOLUMINESCENCE; POLARIZATION MICROSCOPY; PRIORITY JOURNAL; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY;

EID: 70350586827     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/45/455604     Document Type: Article

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