Correlation among crystal defects, depletion regions and junction leakage in sub-30-nm gate-length MOSFETs: Direct examinations by electron holography

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 202-203

  Ikarashi, N ^a   Yako, K ^b   Uejima, K ^b   Yamamoto, T ^b   Ikezawa, T ^a   Hane, M ^b  

^a NEC CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT ANALYSIS; DEFECT DISTRIBUTION; DEPLETION REGION; GATE-LENGTH; JUNCTION LEAKAGE CURRENTS; JUNCTION LEAKAGES; MILLISECOND ANNEALING; MOSFETS; NANO-METER-SCALE; PERIPHERAL COMPONENTS; POTENTIAL ANALYSIS; SOURCE/DRAIN JUNCTIONS; THERMAL PROCESSING;

CRYSTAL DEFECTS; ELECTRON HOLOGRAPHY; HOLOGRAPHIC INTERFEROMETRY; MOSFET DEVICES; RAPID THERMAL ANNEALING;

LEAKAGE (FLUID);

EID: 71049135710     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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