Interpretation of electron beam induced charging of oxide layers in a transistor studied using electron holography

Journal of Physics: Conference Series

Volumn 209, Issue , 2010, Pages

  Ubaldi, F ^a   Pozzi, G ^a   Kasama, T ^b   McCartney, M R ^c   Newcomb, S B ^d   Dunin Borkowski, R E ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^c ARIZONA STATE UNIVERSITY   (United States)

^d Sonsam Limited   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON HOLOGRAPHY; ELECTROSTATICS; HOLOGRAPHY; ION BEAMS; SILICON OXIDES; TRANSMISSION ELECTRON MICROSCOPY;

CROSSSECTIONAL GEOMETRY; ELECTROSTATIC POTENTIALS; FOCUSED ION BEAM MILLING; FRINGING FIELDS; MEAN INNER POTENTIAL; OFF-AXIS ELECTRON HOLOGRAPHY; POSITIVE CHARGES; THREE-DIMENSIONAL CALCULATIONS;

ELECTRONS;

EID: 77950462061     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/209/1/012064     Document Type: Conference Paper

References (2)

1. Dunin-Borkowski RE, Newcomb SB, Kasama T, McCartney MR, Weyland M and Midgley PA 2005 Ultramicroscopy 103 67
2. Matteucci G, Missiroli GF and Pozzi G 1997 Adv.Imaging Electron Phys. 99 171