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Applied Physics Letters

Volumn 100, Issue 14, 2012, Pages

Few electron double quantum dot in an isotopically purified 28Si quantum well

(8) Wild, A a Kierig, J b Sailer, J a,g Ager, J W c Haller, E E c,d Abstreiter, G a,e Ludwig, S f Bougeard, D b

a WALTER SCHOTTKY INSTITUT (Germany)

b UNIVERSITY OF REGENSBURG (Germany)

c LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

d Lawrence Berkeley National Laboratory (United States)

e TECHNICAL UNIVERSITY OF MUNICH (Germany)

f UNIVERSITY OF MUNICH (Germany)

g UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE NOISE; DOUBLE QUANTUM DOTS; DOUBLE-QUANTUM DOT DEVICE; HYPERFINE INTERACTIONS; RESIDUAL CONCENTRATIONS; SPIN DEPHASING; TOP GATE; TWO-DIMENSIONAL ELECTRON SYSTEM;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON MOBILITY; PURIFICATION; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

SILICON;

EID: 84859786723 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3701588 Document Type: Article

Times cited : (31)

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