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Volumn 98, Issue 14, 2011, Pages

Si/SiGe quantum dot with superconducting single-electron transistor charge sensor

(9) Yuan, Mingyun a Pan, Feng a Yang, Zhen a Gilheart, T J a Chen, Fei a Savage, D E b Lagally, M G b Eriksson, M A b Rimberg, A J a

a Dartmouth College (United States)

b UNIVERSITY OF WISCONSIN MADISON (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE SENSORS; CHARGE STATE; COULOMB OSCILLATION; GATE LEAKAGES; QUANTUM DOT; QUANTUM DOTS; SI/SIGE; SUPERCONDUCTING SINGLE-ELECTRON TRANSISTORS;

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; SEMICONDUCTOR QUANTUM DOTS; SENSORS; SUPERCONDUCTING DEVICES; SUPERCONDUCTIVITY;

SINGLE ELECTRON TRANSISTORS;

EID: 79954488109 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3572033 Document Type: Article

Times cited : (13)

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