Mobility and metal-insulator transition of the two-dimensional electron gas in SiGe/Si/SiGe quantum wells

Journal of Applied Physics

Volumn 108, Issue 6, 2010, Pages

  Gold, A ^a,b  

^a CEMES CNRS   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL DENSITY; ELECTRON DENSITIES; EXCHANGE-CORRELATIONS; IMPURITY SCATTERING; QUANTUM WELL; SINGLE-PARTICLE; ZERO TEMPERATURES;

CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRON DENSITY MEASUREMENT; ELECTRON GAS; ELECTRONS; METAL INSULATOR BOUNDARIES; METALS; SCATTERING; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR QUANTUM WELLS; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

METAL INSULATOR TRANSITION;

EID: 77957741028     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3482058     Document Type: Article

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