Origin of switching noise in GaAs AlxGa1-xAs lateral gated devices

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 11, 2005, Pages

  Pioro Ladriere M ^a,b   Davies, John H ^c   Long, A R ^c   Sachrajda, A S ^a   Gaudreau, Louis ^b   Zawadzki, P ^a   Lapointe, J ^a   Gupta, J ^a   Wasilewski, Z ^a   Studenikin, S ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b UNIVERSITÉ DE SHERBROOKE   (Canada)

^c UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 29744450466     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.115331     Document Type: Article

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