Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

Applied Physics Letters

Volumn 100, Issue 4, 2012, Pages

  Payette, C ^a   Wang, K ^a   Koppinen, P J ^a   Dovzhenko, Y ^a   Sturm, J C ^b   Petta, J R ^a,b  

^a PRINCETON UNIVERSITY   (United States)

^b Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE SENSING; DOUBLE QUANTUM DOTS; DOUBLE-QUANTUM DOT DEVICE; GROWTH PARAMETERS; MODULATION-DOPED; QUANTUM DOT DEVICES; QUANTUM HALL MEASUREMENTS; SI/SIGE HETEROSTRUCTURES; SINGLE QUANTUM DOT;

CRYSTALS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON GAS; QUANTUM CHEMISTRY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84863010962     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3678043     Document Type: Article

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