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Applied Physics Letters

Volumn 100, Issue 12, 2012, Pages

Plasmon resonant excitation in grating-gated AlN barrier transistors at terahertz frequency

(7) Wang, Lin a Hu, Weida a Wang, Jun a Wang, Xiaodong a Wang, Shaowei a Chen, Xiaoshuang a Lu, Wei a

a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALN BARRIERS; ALN/GAN; DIELECTRIC RESPONSE; HIGHER ORDER; MATERIAL SYSTEMS; PHONON-POLARITON; PLASMON EXCITATIONS; PLASMON RESONANCES; POLARIZATION EFFECT; RESONANT EXCITATION; ROOM TEMPERATURE; TERAHERTZ APPLICATIONS; TERAHERTZ BAND; TERAHERTZ FREQUENCIES; ULTRA-HIGH;

ELECTRIC EXCITATION; HIGH ELECTRON MOBILITY TRANSISTORS; PHONONS; SURFACE PLASMON RESONANCE;

PLASMONS;

EID: 84859556207 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3695154 Document Type: Article

Times cited : (41)

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