Tuning of ungated plasmons by a gate in the field-effect transistor with two-dimensional electron channel

Journal of Applied Physics

Volumn 104, Issue 2, 2008, Pages

  Popov, V V ^a,b   Koudymov, A N ^a   Shur, M ^a   Polischuk, O V ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ELECTROMAGNETISM; MESFET DEVICES; OPTICAL DATA STORAGE; PLASMONS; RESONANCE; SURFACE PLASMON RESONANCE; TRANSISTORS; TUNING; TWO DIMENSIONAL;

HIGHER-ORDER; IN-FIELD; PLASMON ABSORPTION; PLASMON RESONANCES; PLASMONIC DEVICES; RADIATION-RESISTANCE; TERAHERTZ; TERAHERTZ FREQUENCY RANGE; TERAHERTZ RADIATION; TWO-DIMENSIONAL ELECTRON CHANNELS; VOLTAGE VARIATIONS;

FIELD EFFECT TRANSISTORS;

EID: 48849102554     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2955731     Document Type: Article

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