Effects of oxygen partial pressure on resistive switching characteristics of ZnO thin films by DC reactive magnetron sputtering

Solid State Communications

Volumn 150, Issue 39-40, 2010, Pages 1919-1922

  Ji, Zhenguo ^a,b   Mao, Qinan ^a   Ke, Weiqing ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b HANGZHOU DIANZI UNIVERSITY   (China)

Author keywords

A. Thin films; A. ZnO; D. Resistive switching; E. Magnetron sputtering

Indexed keywords

A. THIN FILMS; CONDUCTION MECHANISM; DC REACTIVE MAGNETRON SPUTTERING; E. MAGNETRON SPUTTERING; FILAMENT FORMATION; HEAVILY DOPED; LOW-RESISTANCE STATE; OHMIC BEHAVIOR; OXYGEN PARTIAL PRESSURE; OXYGEN VACANCY CONCENTRATION; RESET CURRENTS; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SPACE-CHARGE-LIMITED; THIN LAYERS; ZNO; ZNO THIN FILM;

COPPER; EPITAXIAL FILMS; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL FILMS; OXYGEN; PARTIAL PRESSURE; POSITIVE IONS; SEMICONDUCTING SILICON COMPOUNDS; SWITCHING; SWITCHING SYSTEMS; THERMAL EVAPORATION; VAPOR DEPOSITION; ZINC OXIDE;

OXYGEN VACANCIES;

EID: 77957335770     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.07.032     Document Type: Article

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