Electronic structure of silicon oxynitride: Ab-initio and experimental study, comparison with silicon nitride

Journal of Applied Physics

Volumn 110, Issue 11, 2011, Pages

  Nekrashevich, S S ^a   Gritsenko, V A ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; CRYSTALLINE SI; EFFECTIVE MASS; EXPERIMENTAL DATA; EXPERIMENTAL STUDIES; FIRST-PRINCIPLES; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; NITRIDED OXIDES; NONVOLATILE FLASH MEMORIES; OXYNITRIDES; SILICON DEVICES; SILICON OXYNITRIDES; THEORETICAL STUDY; TUNNEL DIELECTRICS; TUNNEL INJECTION;

ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; FLASH MEMORY; GATE DIELECTRICS; SILICON; SILICON NITRIDE; SILICON OXIDES;

AMORPHOUS SILICON;

EID: 84859313689     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3653833     Document Type: Article

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