Electronic structure of amorphous silicon oxynitride with different compositions

Journal of Applied Physics

Volumn 105, Issue 7, 2009, Pages

  Sorokin, A N ^a   Karpushin, A A ^a   Gritsenko, V A ^a   Wong, H ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PROPERTIES; BAND-GAP ENERGIES; CONVENTIONAL APPROACHES; COVALENT SOLIDS; EMPIRICAL PARAMETERS; HOLE BARRIERS; ISOLATED ATOMS; MATRIX ELEMENTS; PARAMETRIZATION; SILICON OXYNITRIDE; TIGHT-BINDING HAMILTONIANS;

CHARGE TRANSFER; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ION EXCHANGE; SILICON NITRIDE; SILICON OXIDES;

AMORPHOUS SILICON;

EID: 65249159575     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3103311     Document Type: Article

References (30)

1. Tight-Binding Approach to Computational Materials Science, MRS Symposia Proceedings No. 491, edited by, P. E. A. Turchi, A. Gonis, and, L. Colombo, (Materials Research Society, Pittsburgh, PA, 1998).
2. O. K. Andersen, O. Jepsen, and G. Krier, in Tight-Binding Approach to Computational Materials Since, MRS Symposia Proceedings No. 491, edited by, P. E. A. Turchi, A. Gonis, and, L. Colombo, (Materials Research Society, Pittsburgh, PA, 1998), pp. 3-34.
3. W. A. Harrison, Electronic Structure and the Properties of Solids, The Physics of the Chemical Bond Vol. 1 (Freeman, San Francisco, CA, 1980), p. 381.
4. V. A. Gritsenko, Silicon Nitride in Electronics (Elsevier, New York, 1988), pp. 138-187.
5. E. P. Gusev, H. -C. Lu, E. L. Garfunkel, T. Gustafsson, and M. L. Green, IBM J. Res. Dev. 43, 265 (1999). 0018-8646
6. V. A. Gritsenko, J. B. Xu, I. H. Wilson, R. M. Kwok, and Y. H. Ng, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.81.1054 81, 1054 (1998).
7. H. Wong and H. Iwai, Microelectron. Eng. 0167-9317 10.1016/j.mee.2006.01. 271 83, 1867 (2006).
8. Y. -C. Yeo, T. -J. King, and C. Hu, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2003.812504 50, 1027 (2003).
9. A. Ikeda, M. Abd Elnaby, R. Hattori, and Y. Kuroki, Thin Solid Films 0040-6090 10.1016/S0040-6090(00)01888-5 386, 111 (2001).
10. V. A. Gritsenko, Structure and Electronic Structure of Amorphous Dielectrics in Silicon MIS Structures (Science, Novosibirsk, Russia, 1993), p. 280.
11. R. J. Powell and M. Morad, J. Appl. Phys. 0021-8979 10.1063/1.325099 49, 2499 (1978).
12. V. A. Gritsenko, E. E. Meerson, and Yu. N. Morokov, Phys. Rev. B 0163-1829 10.1103/PhysRevB.57.R2081 57, R2081 (1998).
13. V. A. Gritsenko, A. V. Shaposhnikov, W. M. Kwok, H. Wong, and G. M. Zhidomirov, Thin Solid Films 0040-6090 10.1016/S0040-6090(03)00601-1 437, 135 (2003).
14. E. Gnani, S. Reggiani, R. Colle, and M. Rudan, IEEE Trans. Electron Devices 0018-9383 10.1109/16.870550 47, 1795 (2000).
15. M. A. L. Marques and E. K. U. Gross, Annu. Rev. Phys. Chem. 0066-426X 10.1146/annurev.physchem.55.091602.094449 55, 427 (2004).
16. J. D. Joannopoulos and M. L. Cohen, Solid State Phys. 31, 71 (1976). 0081-1947
17. A. A. Karpushin, A. N. Sorokin, I. Y. Semenova, and M. Tomasek, Phys. Status Solidi B 0370-1972 10.1002/pssb.2221360137 136, 331 (1986).
18. A. A. Karpushin and A. N. Sorokin, J. Struct. Chem. 0022-4766 10.1007/BF02578565 37, 1 (1996).
19. L. Martin-Moreno, E. Martinez, J. A. Verges, and F. Yndurain, Phys. Rev. B 0163-1829 10.1103/PhysRevB.35.9683 35, 9683 (1987).
20. R. B. Laughlin, J. D. Joannopoulos, and D. J. Chadi, Phys. Rev. B 0163-1829 10.1103/PhysRevB.20.5228 20, 5228 (1979).
21. P. Vogl, H. P. Hjalmarson, and J. D. Dow, J. Phys. Chem. Solids 0022-3697 10.1016/0022-3697(83)90064-1 44, 365 (1983).
22. A. N. Sorokin, A. A. Karpushin, V. A. Gritsenko, and H. Wong, J. Non-Cryst. Solids 0022-3093 10.1016/j.jnoncrysol.2007.04.042 354, 1531 (2008).
23. W. A. Harrison, Phys. Rev. B 0163-1829 10.1103/PhysRevB.31.2121 31, 2121 (1985).
24. J. A. Verges, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.53.2270 53, 2270 (1984).
25. G. M. Bartenev, S. M. Brehovskih, and A. Z. Varisov, Inorg. Mater. 6, 1553 (1970). 0020-1685
26. V. A. Gritsenko, N. D. Dikovskaja, and K. P. Mogilnikov, Thin Solid Films 0040-6090 10.1016/0040-6090(78)90299-7 51, 353 (1978).
27. S. Mirsch and J. Bauer, Phys. Status Solidi A 0031-8965 10.1002/pssa.2210260222 26, 579 (1974).
28. I. A. Brytov, V. A. Gritsenko, and Yu. P. Kostikov, Structure, Electronic Structure and Charge Transport in Silicon Oxynitride (Institute of Semiconductor Physics, Novosibirsk, Russia, 1985).
29. D. M. Brown, P. V. Gray, F. K. Heumann, H. R. Philipp, and E. A. Taft, J. Electrochem. Soc. 0013-4651 10.1149/1.2411151 115, 311 (1968).
30. A. M. Goodman, Phys. Rev. 152, 780 (1966).