Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation

Optics Express

Volumn 20, Issue 102, 2012, Pages A190-A196

  Liu, Shu Yen ^a   Sheu, J K ^a   Lee, M L ^b   Lin, Yu Chuan ^a   Tu, S J ^a   Huang, F W ^a   Lai, W C ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTORS; ELECTROCHEMISTRY; HYDROGEN PRODUCTION; INDIUM COMPOUNDS; OHMIC CONTACTS; TIN; TIN OXIDES;

APPLIED FIELD; COLLECTION EFFICIENCY; ELECTRODE CONTACTS; GAS GENERATION; HYDROGEN GENERATIONS; INDIUM TIN OXIDE; PHOTO-ELECTRODES; PHOTOELECTROCHEMICAL HYDROGEN; PHOTOELECTROCHEMICALS; PHOTOELECTRODE; UNIFORM DISTRIBUTION; WORKING AREAS;

GALLIUM NITRIDE;

EID: 84858981182     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.00A190     Document Type: Article

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