Band-edge energies and photoelectrochemical properties of n-type Al xGa1-xN and InyGa1-yN alloys

Journal of the Electrochemical Society

Volumn 154, Issue 2, 2007, Pages

  Fujii, Katsushi ^a,b   Ono, Masato ^a   Ito, Takashi ^a   Iwaki, Yasuhiro ^a   Hirako, Akira ^a   Ohkawa, Kazuhiro ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPOSITION; LIGHTING; PHOTOCURRENTS; PHOTOELECTROMAGNETIC EFFECTS; VOLTAGE MEASUREMENT;

BAND EDGE ENERGY; ONSET VOLTAGE;

ALUMINUM ALLOYS;

EID: 33846210096     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2402104     Document Type: Article

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