Improved hydrogen gas generation rate of n-GaN photoelectrode with Si O2 protection layer on the Ohmic contacts from the electrolyte

Journal of the Electrochemical Society

Volumn 157, Issue 2, 2010, Pages

  Liu, Shu Yen ^a   Sheu, J K ^a   Tseng, Chun Kai ^a   Ye, Jhao Cheng ^a   Chang, K H ^a   Lee, M L ^b   Lai, W C ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED DEFECTS; COUNTER ELECTRODES; ELECTRON COLLECTIONS; GAN FILM; GAN LAYERS; GAS GENERATION; HYDROGEN GAS GENERATION; PHOTOCURRENT DENSITY; PHOTOELECTRODE; PHOTOELECTROLYSIS; PHOTOGENERATED ELECTRONS; PROTECTION LAYERS; WORKING ELECTRODE;

ELECTRIC CONTACTORS; ELECTRODES; ELECTROLYTES; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; GAS GENERATORS; HYDROGEN PRODUCTION; OHMIC CONTACTS; PLATINUM; SODIUM CHLORIDE;

DENSITY OF GASES;

EID: 73849099373     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3270485     Document Type: Article

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