Effects OF pn-junctions bordering on surfaces investigated by means of 2D-modeling

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 116-119

  Kühn, Ralph ^a   Fath, Peter ^a   Bücher, Ernst ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR JUNCTIONS;

EMITTER-WRAP-THROUGH; FILL FACTOR; P AND N TYPES; P-N JUNCTION; RECOMBINATION MECHANISMS; SOLAR CELL DESIGN; SURFACE PASSIVATION; TWO DIMENSIONAL MODEL;

SOLAR CELLS;

EID: 84895924665     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915768     Document Type: Conference Paper

References (13)

1. J. M. Gee, W. Schubert, P. Basore: "Emitter wrap through solar cell", Proc. 23rd IEEE, vol. 85, 1993, pp. 265-268
2. A. Kress, R. Kühn, P. Fath, G. Willeke, E. Bücher: "Low-Cost Back Contact Silicon Solar Cells", IEEE Transactions on Electron Devices, Vol. 46, No. 10, 1999, pp. 2000-2004
3. G. Willeke, P. Fath: "The POWER Silicon Solar Cell Concept", Proc. 12th European PVSEC, Amsterdam 1994, pp. 766-768
4. R. Kühn, A. Boueke, M. Wibral, M. Spiegel, P. Fath, G. Willeke, E. Bücher: "11% semitransparent bifacialiy active POWER crystalline silicon solar cells", Proc. 2nd world conference and exhibition on photovoltaic solar energy conversion, Wien 1998, pp. 1415-1417
5. R. Kühn, A. Boueke, P. Fath, G. Willeke, E. Bucher: "Investigation of the effect of p/n-junctions bordering on the surface of silicon solar cells", Proc. 2nd world conference and exhibition on photovoltaic solar energy conversion, Wien 1998, pp. 1390-1393
6. C. Sah, R.N. Noyce, W. Shockley: "Carrier generation and recombination in p-n-junctions and p-n-junction characteristics", Proc. IRE 45, 1957, pp.1228-1243
7. R. Corkish, M.A. Green: "Junction recombination current in abrupt junction diodes under forward bias", Journal of Applied Physics 80, 1996, pp. 3083-3090
8. A.S. Groove, D.J. Fitzgerald: "Surface effects on p-n-junctions: characteristics of surface space charge regions under non-equilibrium condition", Solid-State Electronics, Vol.9, 1966, pp. 783-806
9. Dessis manual 3, Integrated Systems Engineering AG, Zurich, Switzerland, http://www.ise.ch
10. P.P. Altermatt, et al., Proc. in PV4, 1996, p. 399-414
11. W. Shockley, W.T. Read: "Statistics of the recombinations of holes and electrons" Phys. Rev. 87, 1952, pp. 835
12. R.N. Hall: "Electron-hole recombination in germanium", Phys. Rev. 87, 1952, pp. 387
13. S.J. Robinson, S.R. Wenham, P.P Altermatt, A.G. Aberle, G. Heiser: "Recombination rate saturation mechanisms at oxidized surfaces of high-efficiency silicon solar cells", J. Appl. Phys. 78 No.7, 1995, pp.4740-4754