Growth of high-quality AIN at high growth rate by high-temperature MOVPE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1617-1619

  Fujimoto, N ^a   Kitano, T ^a   Narita, G ^a   Okada, N ^a   Balakrishnan, K ^a   Iwaya, M ^a   Kamiyama, S ^a   Amano, H ^a   Akasaki, I ^a   Shimono, K ^b   Noro, T ^b   Takagi, T ^b   Bandoh, A ^c  

^a MEIJO UNIVERSITY   (Japan)

^b IBIDEN CO LTD   (Japan)

^c Showa Denko Materials Co   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AIN LAYERS; GROWTH RATE; HIGH-TEMPERATURE GROWTH; STRUCTURAL QUALITY; 61.10.NZ; 68.37.PS; 68.55.JK; 81.05.EA; 81.15.KK;

ATOMIC FORCE MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION;

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY;

EID: 33746337920     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565357     Document Type: Conference Paper

References (7)

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