Polarity control and preparation of AlN nano-islands by hydride vapor phase epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Nagashima, Toru ^a   Hironaka, Keiichiro ^a   Ishizuki, Masanari ^a,b   Kumagai, Yoshinao ^b   Koukitu, Akinori ^b   Takada, Kazuya ^a  

^a TOKUYAMA CORPORATION   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL-POLARITY; ALKALINE SOLUTIONS; ALN; EPITAXIAL RELATIONS; ETCHING TECHNIQUE; GROWTH CONDITIONS; HYDRIDE VAPOR PHASE EPITAXY; NANO-ISLANDS; POLARITY CONTROL; SAPPHIRE SUBSTRATES;

EPITAXIAL GROWTH; SUBSTRATES;

SAPPHIRE;

EID: 79251617506     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880823     Document Type: Article

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