Electrical and optical properties of InP nanowire ensemble p +-i-n + photodetectors

Nanotechnology

Volumn 23, Issue 13, 2012, Pages

  Pettersson, Håkan ^a,b   Zubritskaya, Irina ^a   Nghia, Ngo Tuan ^a   Wallentin, Jesper ^b   Borgström, Magnus T ^b   Storm, Kristian ^b   Landin, Lars ^a   Wickert, Peter ^c   Capasso, Federico ^d   Samuelson, Lars ^b  

^a HALMSTAD UNIVERSITY   (Sweden)

^b LUND UNIVERSITY   (Sweden)

^c Ideon Science Park   (Sweden)

^d HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLASSICAL TRANSPORT; COMPREHENSIVE STUDIES; DIRECT EXCITATION; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL DATA; IDEALITY FACTORS; INP; INP SUBSTRATES; LOW TEMPERATURES; MIXED CRYSTALS; MODULATED CRYSTALS; NEAR INFRARED; PHOTOGENERATED CARRIERS; POLYTYPES; RECTIFYING BEHAVIORS; REVERSE BIAS; SELF-ASSEMBLED; TEMPERATURE-DEPENDENT DIFFUSION; VERTICALLY ALIGNED; WURTZITES; ZINC BLENDE;

ACTIVATION ENERGY; NANOWIRES; OPTICAL PROPERTIES; PHOTOCURRENTS; PHOTODETECTORS; ZINC SULFIDE;

ELECTRIC PROPERTIES;

EID: 84858387129     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/13/135201     Document Type: Article

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