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Volumn 83, Issue 4, 1998, Pages 2261-2265

Low temperature photoluminescence characteristics of Zn-doped InP grown by metalorganic chemical vapor deposition

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EID: 0000845012     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366966     Document Type: Article
Times cited : (32)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.