High-rate deposition of Ta-doped SnO 2 films by reactive magnetron sputtering using a Sn-Ta metal-sintered target

Thin Solid Films

Volumn 520, Issue 10, 2012, Pages 3746-3750

  Muto, Y ^a   Nakatomi, S ^a   Oka, N ^a   Iwabuchi, Y ^b   Kotsubo, H ^b   Shigesato, Y ^a  

^a AOYAMA GAKUIN UNIVERSITY   (Japan)

^b BRIDGESTONE CORPORATION   (Japan)

Author keywords

Discharge impedance; Plasma control unit (PCU); Plasma emission; Reactive sputtering; Ta doped SnO 2 (TTO)

Indexed keywords

FEEDBACK SYSTEMS; GLASS SUBSTRATES; HEATED SUBSTRATES; HIGH-RATE DEPOSITION; MID-FREQUENCY; PLANAR TARGET; PLASMA CONTROL; PLASMA CONTROL UNIT (PCU); PLASMA EMISSION; POWER DENSITIES; REACTIVE MAGNETRON SPUTTERING; SPUTTERING GAS; TA-DOPED SNO 2 (TTO); UNI-POLAR PULSING; UNIPOLAR PULSE;

ELECTRIC DISCHARGES; PLASMA CONFINEMENT; PLASMA DEPOSITION; REACTIVE SPUTTERING; SINTERING; SUBSTRATES; TIN;

TANTALUM;

EID: 84858342908     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.061     Document Type: Conference Paper

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