Franz-Keldysh effect in Germanium p-i-n photodetectors on Silicon

IEEE International Conference on Group IV Photonics GFP

Volumn , Issue , 2010, Pages 329-331

  Schmid, M ^a   Oehme, M ^a   Kaschel, M ^a   Werner, J ^a   Kasper, E ^a   Schulze, J ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Franz Keldysh Effect; Ge detectors; Molecular beam epitaxy; Photonics

Indexed keywords

ABSORPTION CURVES; FRANZ-KELDYSH-EFFECT; GE DETECTORS; P-I-N PHOTODETECTORS;

EPITAXIAL GROWTH; GERMANIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; TENSILE STRAIN;

PHOTONICS;

EID: 78651377257     PISSN: 19492081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GROUP4.2010.5643337     Document Type: Conference Paper

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