High speed germanium detectors on Si

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 9, 2008, Pages 3144-3149

  Kasper, E ^a   Oehme, M ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BROAD SPECTRAL; CAP LAYERS; CARRIER DIFFUSIONS; DEPLETION LAYER; DEPLETION LAYER CAPACITANCE; DEVICE FABRICATIONS; DIRECT ABSORPTION; DIRECT TRANSITION; DOPING PROFILES; GERMANIUM DETECTOR; GROUP-IV SEMICONDUCTORS; HIGH ELECTRIC FIELDS; HIGH-SPEED OPERATION; INDIRECT SEMICONDUCTOR; LIGHT SIGNAL; LOWER LIMITS; MISFIT DISLOCATIONS; NEAR INFRARED; OPERATION BIAS; OPTICAL CONFINEMENT; OPTOELECTRONIC APPLICATIONS; ORDERS OF MAGNITUDE; PIN DIODE; RC TIME CONSTANTS; RIDGE WAVEGUIDES; ROOM TEMPERATURE; SATURATION VELOCITY; SI DETECTORS; SILICON CIRCUITS; SILICON-ON-INSULATOR SUBSTRATES; SILICON-ON-INSULATORS; UPPER LIMITS; VIRTUAL SUBSTRATES; ZERO BIAS;

ABSORPTION; ELECTRIC FIELDS; GERMANIUM; LANTHANUM COMPOUNDS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SILICON CARBIDE; SPEED; WAVEGUIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 75849117976     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200779301     Document Type: Conference Paper

References (13)

1. M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, IEEE Photon. Technol. Lett. 17, 1510 (2005).
2. M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, Appl. Phys. Lett. 89, 071117 (2006).
3. M. Rouvière, L. Vivien, X. Le Roux, J. Mangeney, P. Crozat, C. Hoarau, E. Cassan, D. Pascal, S. Laval, J.-M. Fédéli, J.-F. Damlencourt, J. M. Hartmann, and S. Kolev, Appl. Phys. Lett. 87, 231109 (2005).
4. O. I. Dosunmu, D. D. Cannon, M. K. Emsley, L. C. Kimerling, and M. S. Ünlü, IEEE Photon. Technol. Lett. 17, 175 (2005).
5. G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, IEEE Photon. Technol. Lett. 16, 2547(2004).
6. R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, M. Paniccia, post deadline paper on 4th International Conference on Group IV Photonics, LEOS, Tokyo, Japan (2007).
7. E. A. Fitzgerald, Y.-H. Xie, M. L. Green, D. Brasen, A. R. Kortan, J. Michel, Y.-J Mii, and B. E. Weir, Appl. Phys. Lett. 59, 811 (1991).
8. E. Kasper and K. Lyutovich, Solid-State Electron. 48, 1257 (2004).
9. E. Kasper and K. Lyutovich, Properties of Silicon Germanium and SiGe: Carbon, EMIS Datarev. Ser. 24 (INSPEC (IEE), London, 2000).
10. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley, 2007), p. 677.
11. A. Splett, T. Zinke, K. Petermann, E. Kasper, H. Kibbel, H.-J. Herzog, and H. Presting, IEEE Photon. Technol. Lett. 6, 59 (1994).
12. J. Yu, E. Kasper, and M. Oehme, Thin Solid Films 508, 396 (2006).
13. E. Kasper, Proceeding of the 4th International Conference on Group IV Photonics, LEOS, Tokyo, Japan, 2007.