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Volumn 518, Issue 16, 2010, Pages 4630-4633
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How to prevent twin formation in epitaxial ZnO thin films grown on c-plane sapphire
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Author keywords
Epitaxy; PLD; Sapphire; Thin film; Twinning; ZnO
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Indexed keywords
C-PLANE SAPPHIRE;
CLEANING PROCEDURES;
ELECTRICAL TRANSPORT CHARACTERISTICS;
ELECTRICAL TRANSPORT PROPERTIES;
EPITAXY;
HYDROCARBON LAYERS;
PLD;
SAPPHIRE SUBSTRATES;
SAPPHIRE SURFACE;
SUBSTRATE CLEANING;
TWIN FORMATION;
XRD MEASUREMENTS;
ZNO;
ZNO THIN FILM;
DEPOSITION;
ELECTRIC PROPERTIES;
EPITAXIAL GROWTH;
HYDROCARBONS;
METALLIC FILMS;
OPTICAL FILMS;
PULSED LASER DEPOSITION;
PULSED LASERS;
SAPPHIRE;
SUBSTRATES;
SURFACE DEFECTS;
TRANSPORT PROPERTIES;
VAPOR DEPOSITION;
ZINC OXIDE;
EPITAXIAL FILMS;
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EID: 77955601259
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2009.12.047 Document Type: Conference Paper |
Times cited : (11)
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References (12)
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