|
Volumn 21, Issue 11, 2010, Pages
|
Stages in molecular beam epitaxy growth of GaAs nanowires studied by x-ray diffraction
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ABUNDANCE RATIOS;
AU CATALYSTS;
BRAGG POINT;
GAAS;
GROWTH PROCESS;
HEXAGONAL WURTZITE;
NON-UNIFORM DISTRIBUTION;
RECIPROCAL SPACE MAPS;
ROUGH INTERFACES;
WURTZITE STRUCTURE;
WURTZITES;
ZINC BLENDE;
CATALYSIS;
CATALYSTS;
CRYSTAL GROWTH;
DIFFRACTION;
GALLIUM ARSENIDE;
LATTICE CONSTANTS;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
NANOWIRES;
PHASE INTERFACES;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR QUANTUM WIRES;
X RAY DIFFRACTION;
ZINC;
ZINC SULFIDE;
GALLIUM ALLOYS;
|
EID: 77649155266
PISSN: 09574484
EISSN: 13616528
Source Type: Journal
DOI: 10.1088/0957-4484/21/11/115603 Document Type: Article |
Times cited : (12)
|
References (18)
|