-
2
-
-
3242701624
-
-
10.1103/PhysRevLett.92.236805
-
X. Zhao, C. M. Wei, L. Yang, and M. Y. Chou, Phys. Rev. B 92, 236805 (2004). 10.1103/PhysRevLett.92.236805
-
(2004)
Phys. Rev. B
, vol.92
, pp. 236805
-
-
Zhao, X.1
Wei, C.M.2
Yang, L.3
Chou, M.Y.4
-
3
-
-
0037459371
-
Small-diameter silicon nanowire surfaces
-
DOI 10.1126/science.1080313
-
D. D. D. Ma, C. S. Lee, F. C. K. Au, S. Y. Tong, and S. T. Lee, Science 299, 1874 (2003). 10.1126/science.1080313 (Pubitemid 36356653)
-
(2003)
Science
, vol.299
, Issue.5614
, pp. 1874-1877
-
-
Ma, D.D.D.1
Lee, C.S.2
Au, F.C.K.3
Tong, S.Y.4
Lee, S.T.5
-
6
-
-
4344672595
-
-
10.1063/1.1775288
-
A. Baumer, M. Stutzmann, M. S. Brandt, F. C. K. Au, and S. T. Lee, Appl. Phys. Lett. 85, 943 (2004); 10.1063/1.1775288
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 943
-
-
Baumer, A.1
Stutzmann, M.2
Brandt, M.S.3
Au, F.C.K.4
Lee, S.T.5
-
7
-
-
33646701020
-
Defects in silicon nanowires
-
DOI 10.1063/1.2191830
-
R. P. Wang, Appl. Phys. Lett. 88, 142104 (2006); 10.1063/1.2191830 (Pubitemid 43731478)
-
(2006)
Applied Physics Letters
, vol.88
, Issue.14
, pp. 142104
-
-
Wang, R.P.1
-
8
-
-
80053084928
-
-
L.-B. Luo, X.-B. Yang, F.-X. Liang, H. Xu, Y. Zhao, X. Xie, W.-F. Zhang, and S.-T. Lee, J. Phys. Chem. C 115, 18453 (2011).
-
(2011)
J. Phys. Chem. C
, vol.115
, pp. 18453
-
-
Luo, L.-B.1
Yang, X.-B.2
Liang, F.-X.3
Xu, H.4
Zhao, Y.5
Xie, X.6
Zhang, W.-F.7
Lee, S.-T.8
-
13
-
-
36749115753
-
-
10.1063/1.94244
-
K. L. Brower, Appl. Phys. Lett. 43, 1111 (1983). 10.1063/1.94244
-
(1983)
Appl. Phys. Lett.
, vol.43
, pp. 1111
-
-
Brower, K.L.1
-
14
-
-
0001170732
-
-
10.1103/PhysRevB.48.2418
-
A. Stesmans, Phys. Rev. B 48, 2418 (1993). 10.1103/PhysRevB.48.2418
-
(1993)
Phys. Rev. B
, vol.48
, pp. 2418
-
-
Stesmans, A.1
-
17
-
-
36549104646
-
-
10.1063/1.97798
-
W. E. Carlos, Appl. Phys. Lett. 50, 1450 (1987). 10.1063/1.97798
-
(1987)
Appl. Phys. Lett.
, vol.50
, pp. 1450
-
-
Carlos, W.E.1
-
18
-
-
0000754322
-
-
Afanas'ev, 10.1063/1.367005
-
A. Stesmans and V. V. Afanas'ev, J. Appl. Phys. 83, 2449 (1998). 10.1063/1.367005
-
(1998)
J. Appl. Phys.
, vol.83
, pp. 2449
-
-
Stesmans, A.1
-
19
-
-
0000206815
-
-
edited by D. L. Uhlmann and N. J. Kreidl (Academic, New York)
-
D. L. Griscom, Glass: Science and Technology, edited by, D. L. Uhlmann and, N. J. Kreidl, (Academic, New York, 1990), p. 151.
-
(1990)
Glass: Science and Technology
, pp. 151
-
-
Griscom, D.L.1
-
20
-
-
0001291950
-
-
10.1063/1.373684
-
A. Stesmans, J. Appl. Phys. 88, 489 (2000). 10.1063/1.373684
-
(2000)
J. Appl. Phys.
, vol.88
, pp. 489
-
-
Stesmans, A.1
-
21
-
-
36549095902
-
-
10.1063/1.100620
-
K. L. Brower, Appl. Phys. Lett. 53, 508 (1988). 10.1063/1.100620
-
(1988)
Appl. Phys. Lett.
, vol.53
, pp. 508
-
-
Brower, K.L.1
-
22
-
-
33745905893
-
-
10.1063/1.349282
-
S. M. Hu, J. Appl. Phys. 70, R53 (1991); 10.1063/1.349282
-
(1991)
J. Appl. Phys.
, vol.70
, pp. 53
-
-
Hu, S.M.1
-
23
-
-
34547885491
-
2/Si interface in Si nano wires: A molecular dynamics study
-
DOI 10.1143/JJAP.46.3277, Dielectric Thin Films for Future ULSI Devices
-
H. Ohta, T. Watanabe, and I. Ohdomari, Jap. J. Appl. Phys. 46, 3277 (2007). 10.1143/JJAP.46.3277 (Pubitemid 47256678)
-
(2007)
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
, vol.46
, Issue.5
, pp. 3277-3282
-
-
Ohta, H.1
Watanabe, T.2
Ohdomari, I.3
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