Electroresistance effect in ferroelectric tunnel junctions with symmetric electrodes

ACS Nano

Volumn 6, Issue 2, 2012, Pages 1473-1478

  Bilc, Daniel I ^a   Novaes, Frederico D ^b,c   Íñiguez, Jorge ^b   Ordejón, Pablo ^c   Ghosez, Philippe ^a  

^a UNIVERSITY OF LIÈGE   (Belgium)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c CSIC   (Spain)

Author keywords

ferroelectric tunnel junction; first principles calculations

Indexed keywords

ATOMISTIC APPROACH; EFFICIENT SYSTEMS; ELECTRONIC TRANSPORT; ELECTRORESISTANCE; FERROELECTRIC MEMORY; FERROELECTRIC TUNNEL JUNCTIONS; FINITE BIAS; FIRST-PRINCIPLES; FIRST-PRINCIPLES CALCULATION; MICROSCOPIC MECHANISMS; NONDESTRUCTIVE READOUT; PIEZOELECTRIC RESPONSE; RETENTION TIME; SEMIEMPIRICAL MODELS; ZERO BIAS;

CALCULATIONS; ELECTRIC RESISTANCE; ELECTRODES; FERROELECTRICITY;

TUNNEL JUNCTIONS;

EID: 84857763556     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn2043324     Document Type: Article

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