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Volumn 106, Issue 12, 2009, Pages

Electron transport through asymmetric ferroelectric tunnel junctions: Current-voltage characteristics

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC HYSTERESIS; ELECTRON TRANSPORT; FERROELECTRIC BARRIERS; FERROELECTRIC TUNNEL JUNCTIONS; HYSTERETIC EFFECTS; SPONTANEOUS POLARIZATIONS; TUNNEL CURRENTS; VOLTAGE CURVE;

EID: 73849086459     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3271131     Document Type: Article
Times cited : (10)

References (27)
  • 8
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    • DOI 10.1103/PhysRevLett.97.047201
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    • (2006) Physical Review Letters , vol.97 , Issue.4 , pp. 047201
    • Duan, C.-G.1    Jaswal, S.S.2    Tsymbal, E.Y.3
  • 11
    • 33746013199 scopus 로고    scopus 로고
    • Tunneling across a ferroelectric
    • DOI 10.1126/science.1126230
    • E. Y. Tsymbal and H. Kohlstedt, Science 0036-8075 313, 181 (2006). 10.1126/science.1126230 (Pubitemid 44066239)
    • (2006) Science , vol.313 , Issue.5784 , pp. 181-183
    • Tsymbal, E.Y.1    Kohlstedt, H.2
  • 12
    • 29144456398 scopus 로고    scopus 로고
    • Physics of thin-film ferroelectric oxides
    • DOI 10.1103/RevModPhys.77.1083
    • M. Dawber, K. M. Rabe, and J. F. Scott, Rev. Mod. Phys. 0034-6861 77, 1083 (2005). 10.1103/RevModPhys.77.1083 (Pubitemid 43038903)
    • (2005) Reviews of Modern Physics , vol.77 , Issue.4 , pp. 1083-1130
    • Dawber, M.1    Rabe, K.M.2    Scott, J.F.3
  • 18
    • 65249109266 scopus 로고    scopus 로고
    • 0957-4484. 10.1088/0957-4484/20/7/075401
    • Y. Zheng and C. H. Woo, Nanotechnology 0957-4484 20, 075401 (2009). 10.1088/0957-4484/20/7/075401
    • (2009) Nanotechnology , vol.20 , pp. 075401
    • Zheng, Y.1    Woo, C.H.2
  • 27
    • 73849108311 scopus 로고    scopus 로고
    • note
    • 3 film with the thickness of 1.8 nm could exist in both paraelectric and ferroelectric states.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.