Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 3, 2012, Pages 424-426

  Naresh Kumar, G ^a   Hourahine, B ^a   Vilalta Clemente, A ^b   Ruterana, P ^b   Gamarra, P ^c   Lacam, C ^c   Tordjman, M ^c   Di Forte Poisson, M A ^c   Parbrook, P J ^d,g   Day, A P ^e   England, G ^f   Trager Cowan, C ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b Direction de la Recherche Fondamentale   (France)

^c THALES RESEARCH AND TECHNOLOGY   (France)

^d UNIVERSITY OF SHEFFIELD   (United Kingdom)

^e Claremont House   (United Kingdom)

^f K E Developments Ltd   (United Kingdom)

^g UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

dislocations; electron channelling; SEM

Indexed keywords

BACKSCATTERED ELECTRONS; CRYSTALLOGRAPHIC ORIENTATIONS; ELECTRON CHANNELLING CONTRAST IMAGING; ELECTRON-CHANNELLING; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; GREY SCALE; LOCAL STRAINS; NANOMETRES; NITRIDE SEMICONDUCTORS; ORIENTATION CHANGES; ORIENTED SAMPLE; SAPPHIRE SUBSTRATES; SCANNING ELECTRON MICROSCOPE; THREADING DISLOCATION DENSITIES;

DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; NITRIDES; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; THIN FILMS;

DEFECTS;

EID: 84857750650     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201100416     Document Type: Article

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