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Organic Electronics

Volumn 13, Issue 5, 2012, Pages 875-884

Fixed negative interface charges compromise organic ferroelectric field-effect transistors

(3) Kalbitz, R a Gerhard, R a Taylor, D M b

a UNIVERSITY OF POTSDAM (Germany)

b BANGOR UNIVERSITY (United Kingdom)

Author keywords

Ferroelectric polarization; Ferroelectric polymer; Memory device; Organic FeFET; Organic TFT; Trapped charges

Indexed keywords

COERCIVE FORCE; DATA STORAGE EQUIPMENT; FERROELECTRICITY; ORGANIC FIELD EFFECT TRANSISTORS; POLARIZATION; THRESHOLD VOLTAGE; TRANSISTORS;

FERROELECTRIC POLARIZATION; FERROELECTRIC POLYMERS; ORGANIC FEFET; ORGANIC TFTS; TRAPPED CHARGE;

CAPACITANCE;

EID: 84857663714 PISSN: 15661199 EISSN: None Source Type: Journal
DOI: 10.1016/j.orgel.2012.01.034 Document Type: Article

Times cited : (12)

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