Modeling of metal-ferroelectric-insulator-semiconductor structures based on Langmuir-Blodgett copolymer films

Journal of Applied Physics

Volumn 106, Issue 12, 2009, Pages

  Reece, Timothy J ^a   Ducharme, Stephen ^a  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPOLYMER FILMS; FERROELECTRIC COPOLYMERS; FERROELECTRIC LAYERS; HIGH-K DIELECTRIC; IN-FIELD; LANGMUIR-BLODGETT; LOW COSTS; LOW DIELECTRIC CONSTANTS; LOW PROCESSING TEMPERATURE; MCWHORTER MODEL; MEMORY WINDOW; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR STRUCTURES; NUMERICAL SOLUTION; OPERATING VOLTAGE; ORGANIC SEMICONDUCTOR; POLYVINYLIDENE FLUORIDES; TRIFLUOROETHYLENE;

COPOLYMERIZATION; DIELECTRIC MATERIALS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; LANGMUIR BLODGETT FILMS; NUMERICAL ANALYSIS; PROCESSING;

FERROELECTRIC FILMS;

EID: 73849140397     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3271581     Document Type: Article

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