Inverted InAlAs/InGaAs avalanche photodiode with low-high-low electric field profile

Japanese Journal of Applied Physics

Volumn 51, Issue 2 PART 2, 2012, Pages

  Nada, Masahiro ^a   Muramoto, Yoshifumi ^a   Yokoyama, Haruki ^a   Shigekawa, Naoteru ^a   Ishibashi, Tadao ^a   Kodama, Satoshi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-ILLUMINATED; EDGE BREAKDOWN; ELECTRIC FIELD PROFILES; INALAS/INGAAS; SURFACE LEAKAGE CURRENTS;

ELECTRIC FIELDS;

AVALANCHE PHOTODIODES;

EID: 84857481010     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.02BG03     Document Type: Article

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