InP/InGaAs pin photodiode structure maximising bandwidth and efficiency

Electronics Letters

Volumn 39, Issue 24, 2003, Pages 1749-1750

  Muramoto, Y ^a   Ishibashi, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BANDWIDTH; FREQUENCY RESPONSE; MATHEMATICAL MODELS; PHOTOCURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

CHARGE-CONTROL MODEL; RESPONSIVITY; UNITRAVELLING CARRIER PHOTODIODE;

PHOTODIODES;

EID: 0345134633     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031116     Document Type: Article

References (4)

1. Kato, K., et al.: 'High-efficiency waveguide InGaAs pin photodiode with bandwidth of over 40 GHz', IEEE Photonics Technol. Lett., 1991, 3, (5), pp. 473-474
2. 0.47As photodiode with partially depleted absorber', OFC2003, Atlanta, GA, USA, 2003, WF3
3. Ishibashi, T., et al.: 'Uni-traveling-carrier photodiodes'. Tech. Dig. Ultrafast Electronics and Optoelectronics, Lake Tahoe, CA, USA, 1997, pp. 83-87
4. Fukano, H., et al.: 'Edge-illuminated refracting-facet photodiode with high responsivity and low-operation voltage', Electron. Lett., 1996, 32, pp. 2346-2347