Investigation of guardring-free planar AlInAs avalanche photodiodes

IEEE Photonics Technology Letters

Volumn 18, Issue 11, 2006, Pages 1264-1266

  Yagyu, Eiji ^a   Ishimura, Eitaro ^a   Nakaji, Masaharu ^a   Aoyagi, Toshitaka ^a   Yoshiara, Kiichi ^a   Tokuda, Yasunori ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Avalanche photodiodes (APDs); Electric fields; Optical fiber communications; Optical receivers; Simulation

Indexed keywords

AVALANCHE DIODES; COMPUTER SIMULATION; ELECTRIC FIELDS; EPITAXIAL GROWTH; OPTICAL FIBERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

ELECTRIC FIELD SIMULATIONS; EPITAXY-JUNCTION DIODE; OPTICAL FIBER COMMUNICATIONS; OPTICAL RECEIVERS;

PHOTODIODES;

EID: 33744457015     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.875523     Document Type: Article

References (8)

1. C. Lenox, P. Yuan, H. Nie, O. Baklenov, C. Hansing, J. C. Campbell, A. L. Homles Jr., and B. G. Streetman, "Thin multiplication region InAlAs homojunction avalanche photodiodes," Appl. Phys. Lett., vol. 73, no. 6, pp. 783-784, Aug. 1998.
2. C. Lenox, H. Nie, P. Yuan, G. Kisney, A. L. Homles Jr., B. G. Streetman, and J. C. Campbell, "Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz," IEEE Photon. Technol. Lett., vol. 11, no. 9, pp. 1162-1164, Sep. 1999.
3. T. Nakata, T. Takeuchi, I. Watanabe, K. Makita, and T. Torikai, "10 Gbit/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure," Electron. Lett., vol. 36, no. 24, pp. 2033-2034, Nov. 2000.
4. G. S. Kinsey, J. C. Campbell, and A. G. Dentai, "Waveguide avalanche photodiode operating at 1.55 mm with a gain-bandwidth product of 320 GHz," IEEE Photon. Technol. Lett., vol. 13, no. 8, pp. 842-844, Aug. 2001.
5. N. Li, R. Sidhu, X. Li, F. Ma, X. Zheng, S. Wang, G. Karve, S. Demiguel, A. L. Holmes Jr., and J. C. Campbell, "InGaAs/InAlAs avalanche photodiode with undepleted absorber," Appl. Phys. Lett., vol. 82, no. 13, pp. 2175-2177, Mar. 2003.
6. S. Tanaka, S. Fujisaki, Y. Matsuoka, T. Tsuchiya, S. Tsuji, K. Ito, T. Toyonaka, H. Matsuda, and A. Miura, "Highly sensitive and highly reliable APD for 10 Gbit/s optical communication systems," in 28th Eur. Conf. Optical Communications, Copenhagen, Denmark, 2002, Paper 10.5.3.
7. I. Watanabe, T. Nakata, M. Tsuji, K. Makita, T. Torikai, and K. Taguchi, "High-speed, high-reliability planar-structure superlattice avalanche photodiodes for 10-Gb/s optical receivers," J. Lightw. Technol., vol. 18, no. 12, pp. 2200-2207, Dec. 2000.
8. E. Yagyu, E. Ishimura, M. Nakaji, T. Aoyagi, and Y. Tokuda, "Simple planar structure for high-performance AlInAs avalanche photodiodes," IEEE Photon. Technol. Lett., vol. 18, no. 1, pp. 76-78, Jan. 2006.