40 Gbit/s waveguide avalanche photodiode with p-type absorption layer and thin InAIAs multiplication layer

Electronics Letters

Volumn 43, Issue 8, 2007, Pages 476-477

  Shimizu, S ^a   Shiba, K ^b   Nakata, T ^b   Kasahara, K ^a   Makita, K ^b  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; GAIN CONTROL; IONIZATION; OPTICAL WAVEGUIDES; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS;

ABSORPTION LAYERS; GAIN BANDWIDTH;

AVALANCHE PHOTODIODES;

EID: 34247275294     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20070344     Document Type: Article

References (5)

1. Nakata, T., Takeuchi, T., Makita, K., Kato, T., Amamiya, Y., Suzuki, Y., and Torikai, T.: 'High-sensitivity 40 Gbps receiver module using a wideband InAlAs waveguide avalanche photodiode'. Proc. 28th European Conf. on Optical Communication (ECOC 2002), Copenhagen, Denmark, 2002, Vol. 4, Paper 10.5.1
2. Demiguel, S., Zheng, X., Li, N., Li, X., Campbell, J.C., Decobert, J., Tscherpter, N., and Anselm, A.: 'Evanescently-coupled avalanche photodiodes integrating a short multimode waveguide for high-responsivity and high-speed applications'. Proc. Optical Fiber Communication Conf. (OFC 2004), Los Angeles, CA, USA, 2004, Vol. 1, Paper TvM3
3. Hirota, Y., Ando, S., and Ishibashi, T.: 'High-speed avalanche photodiode with a neutral absorption layer for 1.55-μm wavelength', Jpn. J. Appl. Phys., 2004, 43, (3A), pp. L375-L377
4. Ishibashi, T., Kodama, S., Shimizu, N., and Furuta, T.: 'High-speed response of uni-traveling-carrier photodiodes', Jpn. J. Appl. Phys., 1997, 36, Part 1, (10), pp. 6263-6268
5. Nakata, T., Watanabe, I., Makita, K., and Torikai, T.: 'InAlAs avalanche photodiodes with very thin multiplication layer of 0.1 μm for high-speed and low-voltage-operation optical receiver', Electron. Lett., 2000, 36, (No. 21), pp. 1807-1809