A 512 Kbit low-voltage NV-SRAM with the size of a conventional SRAM

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue CIRCUITS SYMP., 2001, Pages 129-132

  Miwa, T ^a   Yamada, J ^a   Koike, H ^a   Nakura, T ^a   Kobayashi, S ^a   Kasai, N ^a   Toyoshima, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC POTENTIAL; FERROELECTRIC DEVICES; RELIABILITY;

FERROELECTRIC CAPACITORS;

STATIC RANDOM ACCESS STORAGE;

EID: 0034794606     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. NV-SRAM: A nonvolatile SRAM with back-up ferroelectric capacitors
2. NV-SRAM: A nonvolatile SRAM with back-up ferroelectric capacitors
3. Capacitor-on-metal/via-stacked-plug (CMVP) memory cell for 0.25-μm CMOS embedded FeRAM
4. 0.25- μm FeRAM with CMVP (capacitor-on-metal/via-stacked-plug) memory cell