Performance and variability in multi-VT FinFETs using fin doping

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2012, Pages

  Akarvardar, K ^b   Young, C D ^a   Veksler, D ^a   Ang, K W ^a   Ok, I ^a   Rodgers, M ^c   Kaushik, V ^c   Novak, S ^c   Nadeau, J ^d   Baykan, M ^e   Madan, H ^f   Hung, P Y ^a   Ngai, T ^a   Stamper, H ^c   Bennett, S ^c   Franca, D ^c   Rao, M ^c   Gausepohl, S ^c   Majhi, P ^g   Hobbs, C ^a   Kirsch, P ^a   Jammy, R ^a   more..

^a SEMATECH   (United States)

^b IBM MICROELECTRONICS   (United States)

^c SUNY POLYTECHNIC INSTITUTE   (United States)

^d FEI ^*  (United States)

^e UNIVERSITY OF FLORIDA   (United States)

^f PENNSYLVANIA STATE UNIVERSITY   (United States)

^g INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION MODES; DOPANT ATOMS; FIN WIDTHS; FINFET DEVICES; FINFETS; HIGH FIELD; INVERSION MODES; METAL GATE; MODELING RESULTS; ON-OFF RATIO; P-DOPING; ROADMAP; SHORT CHANNELS; SOI FINFETS;

ARSENIC; FINS (HEAT EXCHANGE); MOSFET DEVICES; PHOSPHORUS;

INTEGRATED CIRCUITS;

EID: 84863692900     PISSN: 19308868     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSI-TSA.2012.6210127     Document Type: Conference Paper

References (10)

1. A. Veloso, VLSI Symp. p.14, 2008.
2. R. Singanamalla, VLSI-TSA p.112, 2010.
3. K. Endo, IEEE EDL p.1123, 2007.
4. A. Afzalian, IEEE SNW p.1, 2008.
5. L. Chang, IEDM p.719, 2000.
6. J.-T. Park, IEEE TED p. 2222, 2002.
7. J.-P. Colinge, JJAP 034502, 2009.
8. W. Cheng, JJAP 45(4B) p. 3110 2006.
9. Nature Nanotechnology 5 p. 225 2010.
10. J.C. Ho, Nature Materials 7 p.62 2008.