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Volumn 520, Issue 9, 2012, Pages 3657-3662

Luminescence properties of Ga-graded Cu(In,Ga)Se 2 thin films

(7) Haarstrich, J a Metzner, H a Ronning, C a Undisz, A a Rissom, T b Kaufmann, C A b Schock, H W b

a FRIEDRICH SCHILLER UNIVERSITY JENA (Germany)

Author keywords

Band gap grading; Cathodoluminescence; Charge carrier drift; Cross section; Cu(In,Ga)Se2; In depth analysis; Quasi electric field; Thin film solar cells

Indexed keywords

CHARGE CARRIER DRIFT; CROSS-SECTION; CU(IN,GA)SE2; IN-DEPTH ANALYSIS; QUASI-ELECTRIC FIELD; THIN-FILM SOLAR CELLS;

CATHODOLUMINESCENCE; CHARGE CARRIERS; GRADING; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILMS; TRANSPORT PROPERTIES;

GALLIUM;

EID: 84857370907 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.12.012 Document Type: Article

Times cited : (5)

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