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Applied Physics A: Materials Science and Processing

Volumn 73, Issue 6, 2001, Pages 769-772

Band alignments in the Cu(In,Ga)(S,Se)2 alloy system determined from deep-level defect energies

(3) Turcu, M a Kotschau I M a Rau, U a

a UNIVERSITY OF STUTTGART (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPOSITION EFFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; HETEROJUNCTIONS; POLYCRYSTALLINE MATERIALS; SPUTTER DEPOSITION; THIN FILMS;

ADMITTANCE SPECTROSCOPY; DEEP-LEVEL DEFECT ENERGY; POLYCRYSTALLINE CHALCOPYRITE SEMICONDUCTOR; VALENCE BAND;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0035575570 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390100992 Document Type: Article

Times cited : (27)

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