Boron δ-doped (111) diamond solution gate field effect transistors

Biosensors and Bioelectronics

Volumn 33, Issue 1, 2012, Pages 152-157

  Edgington, Robert ^a   Ruslinda, A Rahim ^b   Sato, Syunsuke ^b   Ishiyama, Yuichiro ^b   Tsuge, Kyosuke ^b   Ono, Tasuku ^b   Kawarada, Hiroshi ^b   Jackman, Richard B ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b WASEDA UNIVERSITY   (Japan)

Author keywords

Delta doping; Diamond; Field effect transistor; ISFET; PH sensor

Indexed keywords

ACTION POTENTIALS; CHEMICAL VAPOUR DEPOSITION; CURRENT VOLTAGE; DELTA-DOPING; DOPED CHANNELS; DOPED DIAMONDS; DRAIN-SOURCE CURRENTS; ELECTROCHEMICAL WINDOW; ENHANCEMENT MODES; FIGURES OF MERITS; HYDROGEN-TERMINATED DIAMOND; MAXIMUM GAIN; PH SENSITIVITY; PINCHOFF; POLYCRYSTALLINE DIAMONDS; SITE BINDING; TEMPORAL RESPONSE; TRANSISTOR CHARACTERISTICS;

ANODIC OXIDATION; BIOCOMPATIBILITY; BORON; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DIAMONDS; ELECTROPHYSIOLOGY; HETEROJUNCTIONS; HYDROGEN; ION SENSITIVE FIELD EFFECT TRANSISTORS; PH SENSORS; PLASMA CVD;

FIELD EFFECT TRANSISTORS;

BORON; BORON DELTA DOPED (111) DIAMOND; DIAMOND; HYDROGEN; POLYCRYSTALLINE DIAMOND; UNCLASSIFIED DRUG;

ACTION POTENTIAL; ARTICLE; BINDING SITE; BIOCOMPATIBILITY; CHEMICAL PHENOMENA; CONDUCTANCE; DEVICES; ELECTRIC POTENTIAL; ELECTROCHEMICAL ANALYSIS; OXIDATION; PH; PLASMA CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR; SOLUTION GATE FIELD EFFECT TRANSISTOR;

ACTION POTENTIALS; BIOSENSING TECHNIQUES; BORON; DIAMOND; ELECTROCHEMICAL TECHNIQUES; HYDROGEN-ION CONCENTRATION; OXIDATION-REDUCTION; TRANSISTORS, ELECTRONIC;

EID: 84857368681     PISSN: 09565663     EISSN: 18734235     Source Type: Journal    
DOI: 10.1016/j.bios.2011.12.044     Document Type: Article

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