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Volumn 51, Issue 2 PART 1, 2012, Pages

Effect of an upward and downward interface dipole langmuir-blodgett monolayer on pentacene organic field-effect transistors: A comparison study

(4) Wei, Ou Yang a Weis, Martin b Manaka, Takaaki a Iwamoto, Mitsumasa a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b SLOVAK UNIVERSITY OF TECHNOLOGY (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARISON STUDY; GATE INSULATOR; INTERFACE DIPOLE; LANGMUIR BLODGETT TECHNIQUES; LANGMUIR-BLODGETT MONOLAYERS; ORGANIC ACTIVE LAYERS; PENTACENES;

CONTACT RESISTANCE; THRESHOLD VOLTAGE;

MONOLAYERS;

EID: 84857284026 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.024102 Document Type: Article

Times cited : (12)

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