Analytical modeling of graphene nanoribbon schottky diodes using asymmetric contacts

Journal of Computational and Theoretical Nanoscience

Volumn 8, Issue 8, 2011, Pages 1467-1472

  Kargar, Alireza ^a  

^a SHIRAZ UNIVERSITY   (Iran)

Author keywords

Analytical Current; Asymmetric Contacts; Graphene Nanoribbon; Rectification Characteristic

Indexed keywords

ANALYTICAL APPROACH; ANALYTICAL EQUATIONS; ANALYTICAL MODELING; ANALYTICAL RELATIONS; CHANNEL CURRENTS; DRAIN BIAS VOLTAGE; ELECTRICAL PARAMETER; GATE BIAS VOLTAGE; GATE INSULATOR; GRAPHENE NANORIBBON; P-TYPE; POTENTIAL DISTRIBUTIONS; RECTIFICATION BEHAVIOR; RECTIFICATION CHARACTERISTIC; RECTIFYING BEHAVIORS; REVERSE-SATURATION CURRENTS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY DIODES; SUB-BANDS; TRANSMISSION PROBABILITIES; WKB APPROXIMATIONS;

APPROXIMATION THEORY; BIAS VOLTAGE; DRAIN CURRENT; SCHOTTKY BARRIER DIODES;

ELECTRIC RECTIFIERS;

EID: 84856837922     PISSN: 15461955     EISSN: None     Source Type: Journal    
DOI: 10.1166/jctn.2011.1836     Document Type: Article

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