A theoretical approach on the strain-induced dislocation effects in the quantum dot solar cells

Solar Energy

Volumn 86, Issue 3, 2012, Pages 935-940

  Gorji, Nima Eshaghi ^a,b  

^a UNIVERSITY OF TABRIZ   (Iran)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Efficiency; Intermediate band; Quantum dot; Solar cell; Strain effect

Indexed keywords

ACTIVE REGIONS; DESIGN CONSTRAINTS; DIFFUSION LENGTH; ELECTRON FILLING FACTORS; INAS QUANTUM DOTS; INTERMEDIATE BANDS; INTERMEDIATE-BAND SOLAR CELLS; INTERNAL QUANTUM EFFICIENCY; LOW ENERGY PHOTONS; MINORITY CARRIER; NON-RADIATIVE RECOMBINATIONS; OPTIMUM NUMBER; QUANTUM DOT LAYERS; QUANTUM DOT SOLAR CELLS; RECOMBINATION LIFETIME; STRAIN EFFECT; STRAIN-INDUCED DISLOCATIONS; THEORETICAL APPROACH;

CURRENT VOLTAGE CHARACTERISTICS; CYTOLOGY; EFFICIENCY; INDIUM ARSENIDE; INFORMATION DISSEMINATION; PHOTONS; SEMICONDUCTOR QUANTUM WELLS; SOLAR CELLS;

SEMICONDUCTOR QUANTUM DOTS;

ELECTRON; FUEL CELL; RENEWABLE RESOURCE; SOLAR POWER; SOLAR RADIATION; THEORETICAL STUDY;

EID: 84856630629     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2011.12.024     Document Type: Article

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