Fabrication of ultra-high density InAs-stacked quantum dots by strain-controlled growth on InP(3 1 1)B substrate

Journal of Crystal Growth

Volumn 245, Issue 1-2, 2002, Pages 31-36

  Akahane, Kouichi ^a   Ohtani, Naoki ^a   Okada, Yoshitaka ^b   Kawabe, Mitsuo ^b  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; FAST FOURIER TRANSFORMS; GROUND STATE; LATTICE CONSTANTS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

LATTICE MIS-MATCHED MATERIAL SYSTEMS;

MOLECULAR BEAM EPITAXY;

EID: 0036836734     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01701-3     Document Type: Article

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