The application of an InGaAs/GaAsN strain-compensated superlattice to InAs quantum dots

Journal of Applied Physics

Volumn 99, Issue 10, 2006, Pages

  Zhang, Wei ^a   Uesugi, Katsuhiro ^a   Suemune, Ikuo ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; STRAIN; SUPERLATTICES;

COMPRESSIVE STRAIN; EMISSION WAVELENGTH; REDSHIFT; STRAIN-COMPENSATED SUPERLATTICE (SCSL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 33744814961     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2197261     Document Type: Article

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