Ohmic contacts to pseudomorphic HEMTs with low contact resistance due to enhanced Ge penetration through AlGaAs layers

Semiconductor Science and Technology

Volumn 23, Issue 2, 2008, Pages

  Saravanan, G Sai ^a   Mahadeva Bhat, K ^a   Muraleedharan, K ^b   Vyas, H P ^c   Muralidharan, R ^c   Pathak, A P ^d  

^a Gallium Arsenide Enabling Technology Centre   (India)

^b DEFENCE METALLURGICAL RESEARCH LABORATORY   (India)

^c SOLID STATE PHYSICS LABORATORY   (India)

^d UNIVERSITY OF HYDERABAD   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYING ELEMENTS; CONTACT RESISTANCE; DRAIN CURRENT; ELECTRON GAS; OHMIC CONTACTS; SURFACE DIFFUSION;

GERMANIUM DIFFUSION; HIGH ALLOYING TEMPERATURES; SOURCE-DRAIN CURRENTS; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 42549153948     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/23/2/025019     Document Type: Article

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