Evidence of a fully ballistic one-dimensional field-effect transistor: Experiment and simulation

Applied Physics Letters

Volumn 97, Issue 23, 2010, Pages

  Grmion E ^a   Niepce, D ^a   Cavanna, A ^a   Gennser, U ^a   Jin, Y ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH GAIN; LANDAUER; MESOSCOPIC PHYSICS; QUANTUM POINT CONTACT; SIMULATION RESULT; VOLTAGE GAIN;

BALLISTICS; FIELD EFFECT TRANSISTORS; MESFET DEVICES; QUANTUM CHEMISTRY;

POINT CONTACTS;

EID: 78650344177     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3521466     Document Type: Article

References (19)

1. B. van Wees, H. van Houton, C. Beenakker, J. Williamson, L. Kouwenhoven, D. van der Marel, and C. Foxon, Phys. Rev. Lett. PRLTAO 0031-9007 60, 848 (1988). 10.1103/PhysRevLett.60.848
2. D. Wharam, T. Thornton, R. Newbury, M. Pepper, H. Ahmed, J. Frost, D. H. D. Peacock, D. Ritchie, and G. Jones, J. Phys. C JPSOAW 0022-3719 21, L209 (1988). 10.1088/0022-3719/21/8/002
3. T. Thornton, M. Pepper, H. Ahmed, D. Andrews, and G. Davies, Phys. Rev. Lett. PRLTAO 0031-9007 56, 1198 (1986). 10.1103/PhysRevLett.56.1198
4. H. Zheng, H. Wei, D. Tsui, and G. Weimann, Phys. Rev. B PLRBAQ 0556-2805 34, 5635 (1986). 10.1103/PhysRevB.34.5635
5. M. Reznikov, M. Heiblum, H. Shtribman, and D. Mahalu, Phys. Rev. Lett. PRLTAO 0031-9007 75, 3340 (1995). 10.1103/PhysRevLett.75.3340
6. A. Kumar, L. Saminadayar, D. Glattli, Y. Jin, and B. Etienne, Phys. Rev. Lett. PRLTAO 0031-9007 76, 2778 (1996). 10.1103/PhysRevLett.76.2778
7. J. Gabelli, G. Feve, J. Berroir, B. Placais, A. Cavanna, B. Etienne, Y. Jin, and D. Glattli, Science SCIEAS 0036-8075 313, 499 (2006). 10.1126/science.1126940
8. G. Feve, A. Mahe, J. Berroir, T. Kontos, B. Placais, D. Glattli, A. Cavanna, B. Etienne, and Y. Jin, Science SCIEAS 0036-8075 316, 1169 (2007). 10.1126/science.1141243
9. See supplementary material at http://dx.doi.org/10.1063/1.3521466 E-APPLAB-97-083048 for the discussion of various gains in FETs, for IDS-VGS characteristics, and for IDS-VDS characteristics and power consumptions.
10. S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, Cambridge, 1997).
11. M. Büttiker, Phys. Rev. B PLRBAQ 0556-2805 41, 7906 (1990). 10.1103/PhysRevB.41.7906
12. R. Troutman, IEEE Trans. Electron Devices IETDAI 0018-9383 26, 461 (1979). 10.1109/T-ED.1979.19449
13. K. Thomas, M. Simmons, J. Nicholls, D. Mace, M. Pepper, and D. Ritchie, Appl. Phys. Lett. APPLAB 0003-6951 67, 109 (1995). 10.1063/1.115498
14. J. Frost, K. Berggren, M. Pepper, M. Grimshaw, D. Ritchie, A. Churchill, and G. Jones, Phys. Rev. B PLRBAQ 0556-2805 49, 11500 (1994). 10.1103/PhysRevB.49.11500
15. V. Senz, T. Heinzel, T. Ihn, S. Lindemann, R. Held, K. Ensslin, W. Wegscheider, and M. Bichler, J. Phys.: Condens. Matter JCOMEL 0953-8984 13, 3831 (2001). 10.1088/0953-8984/13/17/303
16. E. Gŕmion, Ph.D. thesis, Universit́ Paris-Sud 11, 2008 (http://tel.archives-ouvertes.fr/tel-00315433/fr/).
17. L. Kouwenhoven, B. Vanwees, C. Harmans, J. Williamson, H. V. C. Beenakker, C. Foxon, and J. Harris, Phys. Rev. B PLRBAQ 0556-2805 39, 8040 (1989). 10.1103/PhysRevB.39.8040
18. J. Brews, in Silicon Integrated Circuits, edited by, D. Kahng, (Academic, New York, 1981), p. 1.
19. B. LeRoy, J. Phys.: Condens. Matter JCOMEL 0953-8984 15, R1835 (2003). 10.1088/0953-8984/15/50/R02