Experimental Study of Transport in Nanoscale Planar MOSFETs Near the Ballistic Limit

IEEE Transactions on Nanotechnology

Volumn 3, Issue 1 SPEC. ISS., 2004, Pages 105-109

  Boeuf, Frédéric ^a   Jehl, Xavier ^b   Sanquer, Marc ^b   Skotnicki, Thomas ^a  

^a STMICROELECTRONICS   (France)

^b Atomic Energy Council   (France)

Author keywords

Charge carrier mobility; MOS devices; MOS FETs; Nanotechnology; Superconductor insulator semiconductor devices; Tunneling

Indexed keywords

BALLISTICS; CARRIER MOBILITY; CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; DIFFUSION; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRON TUNNELING; MOS DEVICES; NANOTECHNOLOGY; PERMITTIVITY; RESONANCE; SCHOTTKY BARRIER DIODES; SUPERCONDUCTING MATERIALS;

CHARGE CARRIER MOBILITY; GATE VOLTAGE; MOS-FETS; SUPERCONDUCTOR-INSULATOR-SEMICONDUCTOR DEVICES;

MOSFET DEVICES;

EID: 2342529738     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2003.820786     Document Type: Conference Paper

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